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By W. Frank (auth.), Billy L. Crowder (eds.)

During the years because the first convention during this sequence was once held at Thousand Oaks, California, in 1970, ion implantation has been an increasing and fascinating study region. The advances during this box have been so swift moment convention convened at Garmisch­ Partenkirchen, Germany, in 1971. today, our lower than­ status of the ion implantation technique in semiconductors equivalent to Si and Ge has reached a level of adulthood and ion implantation strategies are firmly demonstrated in semiconductor machine know-how. The advances in compound semiconductors haven't been as speedy. There has additionally been a shift in emphasis in ion implanta­ tion study from semiconductors to different fabrics reminiscent of metals and insulators. It was once applicable to extend the scope of the convention and the IIIrd overseas convention on Ion Implanta­ tion in Semiconductors and different fabrics used to be held at Yorktown Heights, ny, December eleven to fourteen, 1972. an important variety of the papers offered at this convention handled ion implanta­ tion in metals, insulators, and compound semiconductors. The overseas Committee accountable for organizing this convention consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and that i. Ruge. The convention attracted one hundred eighty contributors from twelve international locations. The good fortune of the convention used to be due in huge degree to the monetary help of our sponsors, Air strength Cambridge examine Laboratories and the workplace of Naval Research.

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