By Daniel M. Fleetwood
This e-book offers an in depth remedy of radiation results in digital units, together with results on the fabric, gadget, and circuit degrees. The emphasis is on temporary results brought on by unmarried ionizing debris (single-event results and gentle blunders) and results produced by way of the cumulative power deposited by way of the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (Mos), and compound semiconductor applied sciences are mentioned. as well as contemplating the explicit concerns linked to high-performance units and applied sciences, the publication comprises the history fabric invaluable for realizing radiation results at a extra common point.
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